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| 0405-1000M R3 . 0405-1000M 1000 Watts - 40 Volts, 300s, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty factor across the frequency band 400-450 MHz. This hermetically sealed transistor is specifically designed for medium pulse radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55SL, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC1 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1400 Watts 85 Volts 3.5 Volts 70 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pg CHARACTERISTICS Power Out (Note 2) Pulsed Power Gain Collector Efficiency Pulse Amplitude Droop Load Mismatch Tolerance TEST CONDITIONS F = 400-450 MHz Vcc = 40 Volts, Pulse Width = 300 s Duty = 10 % As above F = 425MHz, Po =1000W MIN 1000 9.5 50 10 0.5 2:1 TYP MAX UNITS Watts dB % dB c Pd VSWR1 FUNCTIONAL CHARACTERISTICS @ 25 OC Bvces Ices Iebo Hfe Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage Current DC Current Gain Thermal Resistance Ic = 5 mA Vce = 50 Volts Veb = 3.0 Volts Vce = 5 V, Ic = 100mA Rated Pulse Condition 80 30 25 10 0.08 o Volts mA mA C/W jc 1 Issue Nov. 2006 Note 1: Pulse width = 300 us, duty = 10% Note 2: Power Input = 110 Watts Peak Pulsed Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 0405-1000M R3 . 0405-1000M 0405-1000M Pout Vs. Pin @300uS10%40V 1400 1200 1000 800 600 400 200 0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 Performance Curves Ot u P wrW up t o e ( ) 400MHz 425MHz 450MHz Input Power (W) 0405-1000M Efficiency Vs. Pin @300uS10%40V 100% 90% 80% 70% Efce c f i i ny 60% 50% 40% 30% 20% 10% 0% 0.0 20.0 40.0 60.0 80.0 100.0 120.0 400MHz 425MHz 450MHz Input Power(W) 12 11.5 11 10.5 10 9.5 0405-1000M Band Width@300uS10%40V P u( ) o tW 9 8.5 8 7.5 7 6.5 6 5.5 5 400 405 410 415 420 425 430 Pin=95W 435 440 445 450 Frequency(MHz) Single-Ended Impedance Information Single-Ended Impedance Freq Zs Zl 400 1.39-j2.9 0.79-j2.41 425 1.94-j2.93 0.86-j2.55 450 2.21-j3.07 0.91-j2.95 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 0405-1000M R3 0405-1000M Broadband Test Fixture Board Material ARLON 2.55 31 Mil TRL Measurement Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 0405-1000M R3 0405-1000M Case Outline Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 |
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